K2267 - N-Channel MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC D TO-3P( N ) G S N-Channel MOSFET.

K2267 n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	K2267
Manufacturer	VBsemi
File Size	453.94 KB
Description	N-Channel MOSFET
Datasheet	K2267 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K2267-VB K2267-VB Datasheet N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration 60 0.0028 0.0040 210 Single FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC D TO-3P( N ) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.