The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
K2312-VB
K2312-VB Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
0.010 at VGS = 10 V
0.012 at VGS = 4.5 V
ID (A)a 70 55
FEATURES • 175 °C Junction Temperature • Trench Power MOSFET • Material categorization:
www.VBsemi.com
TO-220 FULLPAK
D
GDS
Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
70 50a
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.
K2312 Datasheet
