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K25E06K3-VB
K25E06K3-VB Datasheet
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
60
0.011 at VGS = 10 V
0.013 at VGS = 4.5 V
ID (A)a 60 50
TO-220AB
S D G
FEATURES • 175 °C Junction Temperature • Trench Power MOSFET • Material categorization:
D
G
S N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 100 °C
ID
60 50a
Pulsed Drain Current
IDM
200
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAS
50
Single Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAS
125
mJ
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
136 3b, 8.
K25E06K3 Datasheet
