VBsemi Electronics K3480
N-Channel MOSFET
| Part No. | K3480 |
|---|---|
| Datasheet | K3480 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFETS● 175 °C Junction Temperature
● Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-220AB G GD S Top View S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). (PCB Mount)c * Pb containing terminations are not RoHS compliant, exemptions may apply. Symbol RthJA RthJC Limit 100 ± 20 55 40 135 35 61 127b 3.75 - 55 to 175 Limit 40 1.4 Unit V A mJ W °C Unit °C/W K3480-VB SPECIFICATIONS TJ = 25 °C, u...
