Full PDF Text Transcription for K34A10N1 (Reference)
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K34A10N1. For precise diagrams, and layout, please refer to the original PDF.
K34A10N1-VB K34A10N1-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration 100 0.0038 120...
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VDS (V) RDS(on) () at VGS = 10 V ID (A) Configuration 100 0.0038 120 Single FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested TO-220 FULLPAK D G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.
K34A10N1 Datasheet
