K3617-TL-E Overview
K3617-TL-E-VB K3617-TL-E-VB Datasheet N-Channel 100 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 D TO-252.
K3617-TL-E Key Features
- Trench Power MOSFET
- 150 °C Junction Temperature
- PWM Optimized
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC