Full PDF Text Transcription for K3978-TL-E (Reference)
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K3978-TL-E. For precise diagrams, and layout, please refer to the original PDF.
K3978-TL-E-VB K3978-TL-E-VB Datasheet N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252 FEATURES ...
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S (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252 FEATURES • Trench Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.
K3978-TL-E Datasheet
