K4A60 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Part: K4A60
- Manufacturer: VBsemi
- Size: 286.52 KB
Other K4A60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
K4A60DA | TK4A60DA |
Toshiba |
K4A60DB | TK4A60DB |
K4A60 Description
K4A60-VB K4A60-VB Datasheet /$IBOOFM7 %4 Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.