K8N80 Overview
K8N80-VB K8N80-VB Datasheet Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. (nC) Qgs (nC) Qgd (nC) Configuration 850 VGS = 10 V 43 5 22 Single 0.90 TO-247AC.
K8N80 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)