VBsemi Electronics L6372
Dual N-Channel MOSFET
| Part No. | L6372 |
|---|---|
| Datasheet | L6372 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFETPower MOSFET● 100 % Rg Tested
● 100 % UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Notebook System Power● Low Current DC/DC S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 6 D2 5 D2 D1 D2 G1 G2 S1 N-Channel MOSFET S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS ISM IAS EAS PD TJ, Tstg Limit 30 ± 20 8.5 7.5 7.2b, c 5.9b, c 30 2.8 1.8b, c 30 10 5 3.1 2.0 2.0b, c 1.25b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t 10 s Steady-State Notes: a.
