VBsemi Electronics LB3036
N-Channel MOSFET
| Part No. | LB3036 |
|---|---|
| Datasheet | LB3036 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested TO-220AB D Top View S D G G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 270 120 a 120 a 600 75 281 375 125 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). PCB Mount c SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT V A mJ W °C UNIT °C/W 1 LB3036-VB SPECIFICATIONS (TC = 25 °C, unless otherwise noted)...
