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LBSS139LT1G - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low Threshold: 2 V (typ. ).
  • Low Input Capacitance: 25 pF.
  • Fast Switching Speed: 25 ns.
  • Low Input and Output Leakage.
  • TrenchFET® Power MOSFET.
  • 1200V ESD Protection.
  • Compliant to RoHS Directive 2002/95/EC 3D S2 Top View D G S N-Channel MOSFET.

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LBSS139LT1G www.VBsemi.com LBSS139LT1G Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V SOT-23 G1 ID (mA) 250 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • 1200V ESD Protection • Compliant to RoHS Directive 2002/95/EC 3D S2 Top View D G S N-Channel MOSFET BENEFITS • Low Offset Voltage • Low-Voltage Operation • Easily Driven Without Buffer • High-Speed Circuits • Low Error Voltage APPLICATIONS • Direct Logic-Level Interface: TTL/CMOS • Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories, Transistors, etc.