VBsemi Electronics LD120
N-Channel 100V MOSFET
| Part No. | LD120 |
|---|---|
| Datasheet | LD120 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 100V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % UIS Tested
APPLICATIONS
● High Frequency Boost Converter● LED Backlight for LCD TV D HVMDIP S G D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Avalanche Current Single Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 100 ± 20 4.5 3.5 2.9a, b 2.3a, b 16 4 2a, b 6 1.8 4.8 3 2.4a, b 1.5a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t 10 s Steady State Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 °C/W. d. Based on TC = 25 °C.
