LD120 - N-Channel 100V MOSFET

Features

Trench Power MOSFET.
100 % UIS Tested.

VBsemi

Datasheet Details

Part number	LD120
Manufacturer	VBsemi
File Size	250.62 KB
Description	N-Channel 100V MOSFET
Datasheet	LD120 Datasheet
Additional preview pages of the LD120 datasheet.

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Full PDF Text Transcription

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LD120-VB LD120-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () 0.080 at VGS = 10 V 100 0.090 at VGS = 6 V ID (A)d 4.5 4.0 Qg (Typ.) 4.6 nC FEATURES • Trench Power MOSFET • 100 % UIS Tested APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV D HVMDIP S G D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Avalanche Current Single Avalanche Energy L = 0.

Published: Nov 6, 2025 |