MDD3754RH
MDD3754RH is P-Channel MOSFET manufactured by VBsemi.
FEATURES
- Trench FET® power MOSFET
- Package with low thermal resistance
- 100 % Rg and UIS tested
TO-252
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C a TC = 125 °C
L = 0.1 m H TA = 25 °C TC = 25 °C TC = 125 °C
VDS VGS ID IS IDM IAS EAS
TJ, Tstg
LIMIT -40 ± 20 -50 -39 -50 -200 -40 80 3 136 45
-55 to +175
THERMAL RESISTANCE RATINGS
PARAMETER Junction-to-Ambient Junction-to-Case (Drain)
Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing.
PCB Mount c
SYMBOL Rth JA Rth JC
LIMIT 50 1.1
UNIT V A m J W °C
UNIT °C/W
.VBsemi.
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage
Zero Gate Voltage Drain Current On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea Dynamic...
