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MDU2657RH
N-Channel 30-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 30
RDS(on) () 0.007 at VGS = 10 V 0.009 at VGS = 4.5 V
ID (A)a, e 60 48
Qg (Typ) 31 nC
DFN5X6 Single D
D8 D7 D6 5
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
• OR-ing
D
• Server
• DC/DC
G
6.15 mm 1
Top View
5.15 mm
1 2S 3S 4S G Bottom View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
MDU2657 Datasheet
