MDV3604URH
MDV3604URH is P-Channel MOSFET manufactured by VBsemi.
FEATURES
- Extended VGS range (± 25 V) for adaptor switch applications
- Extremely low RDS(on)
- Trench FET® Power MOSFET
- 100 % Rg and UIS Tested
DFN8(5- 6)
6.15 mm
7 D
6 D
5.15 mm
2 S
3 G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
TA = 70 °C
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.1 m H
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C TA = 25...
