VBsemi Electronics ME6980ED
Dual N-Channel MOSFET
| Part No. | ME6980ED |
|---|---|
| Datasheet | ME6980ED Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free Option Available● TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 8.6 7.2 7.5 5.5 A IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.6 1.2 0.98 0.67 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 72 100 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. Max. 83 120 70 Unit °C/W 1 ME6980ED-VB SPECIFICATIONS TJ = 25 °C...
