VBsemi Electronics MI8601
The DFN3x3 package is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | MI8601 |
|---|---|
| Datasheet | MI8601 Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual P-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Available● TrenchFET® Power MOSFET
● New Low Thermal Resistance PowerPAK® Package
APPLICATIONS
● Portable - Battery Switch - Load Switch S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 30 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 85 °C ID - 6.4 - 4.6 - 4.3 - 3.1 A IDM - 20 Continuous Source Current (Diode Conduction)a IS - 2.3 - 1.1 Maximum Power Dissipationa TA = 25 °C TA = 85 °C PD 2.8 1.3 1.5 0.85 W Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TJ, Tstg - 55 to 150 °C 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA 35 75 Steady State RthJC 4 44 94 °C/W 5 Notes: a. Surface Mounted on 1" x 1" FR4 board. b.
