MTN7002ZHN3
MTN7002ZHN3 is N-Channel 60V MOSFET manufactured by VBsemi.
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Low Threshold: 2 V (typ.)
- Low Input Capacitance: 25 p F
- Fast Switching Speed: 25 ns
- Low Input and Output Leakage
- Trench FET® Power MOSFET
- pliant to Ro HS Directive 2002/95/EC
BENEFITS
- Low Offset Voltage
- Low-Voltage Operation
- Easily Driven Without Buffer
- High-Speed Circuits
- Low Error Voltage
APPLICATIONS
- Direct Logic-Level Interface: TTL/CMOS
- Drivers: Relays, Solenoids, Lamps, Hammers, Display,
Memories, Transistors, etc.
- Battery Operated Systems
- Solid-State Relays
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta
Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range
TA = 25 °C TA = 100 °C
TA = 25 °C TA = 100 °C
VDS VGS
IDM PD Rth JA TJ, Tstg
Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board.
Limit 60 ± 20 250 150 800 0.30 0.13 350
- 55 to 150
Unit V m A
W °C/W
°C
- Pb containing terminations are not Ro HS pliant, exemptions may apply. 1
MTN7002ZHN3-VB
.VBsemi....
