VBsemi Electronics N7240
The DFN 3X x 3 EP is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
● Capable of Operating with 5 V Gate Drive
APPLICATIONS
● Synchronous Rectification● Synchronous Buck Converters D
● ORing
● Load Switching
● Motor Drive Switch Top View G Pin 1 1 8 2 7 3 6 4 5 S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (t = 100 µs) IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg Limit 40 ± 20 40g 40g 19.3a, b 15.5a, b 100 40g 3.1a, b 20 20 52 33 3.7a, b 2.4a, b - 55 to 150 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Maximum Junction-to-Ambienta, e t 10 s RthJA 26 33 Maximum Junction-to-Case (Drain) Steady State RthJC 1.9 2.4 Notes: a.