VBsemi Electronics NCE1520
N-Channel 150-V MOSFET
FEATURES
● Trench power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested TO-220AB D Top View S D G G N-Channel MOSFET S
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Energy Single Pulse Avalanche Current L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 150 ± 20 20 14 50 60 30 45 107 35 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. PCB Mount c SYMBOL RthJA RthJC LIMIT 50 1.4 UNIT V A mJ W °C UNIT °C/W 400-655-8788 NCE1520-VB SPECIFICATIONS...