NCE1520 - N-Channel 150-V MOSFET

VBsemi

Key Features

Trench power MOSFET.
Package with low thermal resistance.
100 % Rg and UIS tested TO-220AB D Top View S D G G N-Channel MOSFET S.

NCE1520 n-channel 150-v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NCE1520
Manufacturer	VBsemi
File Size	315.30 KB
Description	N-Channel 150-V MOSFET
Datasheet	NCE1520 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
NCE1520	NCE N-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE1520K	N-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE1520KA	N-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE1502R	N-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor
NCE1505S	N-Channel Enhancement Mode Power MOSFET	NCE Power Semiconductor

Other Datasheets by VBsemi

Part Number	Description
NCE1540KA	N-Channel 150V MOSFET
NCE1570	N-Channel 150V MOSFET
NCE0103	N-Channel 100V MOSFET
NCE0157A2	N-Channel Power MOSFET
NCE01H16	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

NCE1520-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package NCE1520-VB Datasheet N-Channel 150 V (D-S) MOSFET www.VBsemi.com 150 0.075 20 Single TO-220 FEATURES • Trench power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-220AB D Top View S D G G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Energy Single Pulse Avalanche Current L = 0.