VBsemi Electronics NCE3413
P-Channel MOSFET
| Part No. | NCE3413 |
|---|---|
| Datasheet | NCE3413 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg Tested
APPLICATIONS
● For Mobile Computing - Load Switch - Notebook Adaptor Switch - DC/DC Converter G1 S2 3D Top View G D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C - 30 ± 20 - 5.6 - 5.1 - 5.4b,c - 4.3b,c Pulsed Drain Current (t = 100 µs) Continous Source-Drain Diode Current Maximum Power Dissipation IDM TC = 25 °C TA = 25 °C IS TC = 25 °C TC = 70 °C TA = 25 °C PD TA = 70 °C - 18 - 2.1 - 1b,c 2.5 1.6 1.25b,c 0.8b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,d Maximum Junction-to-Foot (Drain) t5s Steady State Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. Symbol RthJA...
