NCE6060 - N-Channel 60V MOSFET

VBsemi

Key Features

175 °C Junction Temperature.
Trench Power MOSFET.
Material categorization: D G S N-Channel MOSFET www. VBsemi. com.

NCE6060 n-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	NCE6060
Manufacturer	VBsemi
File Size	226.26 KB
Description	N-Channel 60V MOSFET
Datasheet	NCE6060 Datasheet

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Full PDF Text Transcription (Reference)

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NCE6060-VB NCE6060-VB Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 60 0.011 at VGS = 10 V 0.013 at VGS = 4.5 V ID (A)a 60 50 TO-220AB S D G FEATURES • 175 °C Junction Temperature • Trench Power MOSFET • Material categorization: D G S N-Channel MOSFET www.VBsemi.com ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 100 °C ID 60 50a Pulsed Drain Current IDM 200 A Continuous Source Current (Diode Conduction) IS 50a Avalanche Current IAS 50 Single Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAS 125 mJ Maximum Power Dissipation TC = 25 °C TA = 25 °C PD 136 3b, 8.