NCE65R2K4K Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
- Fully Characterized Capacitance and Avalanche Voltage and Current
- pliant to RoHS directive 2002/95/EC
- Part: NCE65R2K4K
- Manufacturer: VBsemi
- Size: 946.26 KB
Other NCE65R2K4K Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
NCE Power |
NCE65R2K4K | N-Channel Super Junction Power MOSFET |
|
NCE Power |
NCE65R2K4I | N-Channel Super Junction Power MOSFET |
NCE65R2K4K Description
NCE65R2K4K Power MOSFET .VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 1.8 48 12 19 Single.