VBsemi Electronics NCEP0135A
N-Channel 100V MOSFET
| Part No. | NCEP0135A |
|---|---|
| Datasheet | NCEP0135A Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 100V MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● Primary Side Switch● Isolated DC/DC Converter G GDS Top View S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 100 ± 20 45a 30 9.2b 6.8b 140 45a 2b 35 101 136.4 68.2 3b 1.5b - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Case Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Steady State Symbol RthJA RthJC Typical 40 0.85 Maximum 50 1.1 Unit V A mJ W °C Unit °C/W 1 NCEP013...
