Datasheet4U Logo Datasheet4U.com

NCEP01T30T - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • Package with Low Thermal Resistance.
  • 100 % Rg and UIS Tested D G S N-Channel MOSFET.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NCEP01T30T N-Channel Super Trench Power MOSFET NCE Power Semiconductor
NCEP01T11 N-Channel Super Trench Power MOSFET NCE Power Semiconductor
NCEP01T12 N-Channel Super Trench Power MOSFET NCE Power Semiconductor
NCEP01T13 N-Channel Super Trench Power MOSFET NCE Power Semiconductor
NCEP01T13A N-Channel Super Trench Power MOSFET NCE Power Semiconductor

Other Datasheets by VBsemi

Part Number Description
NCEP01T15 N-Channel 100V MOSFET
NCEP0135A N-Channel 100V MOSFET
NCEP40T11G N-Channel MOSFET
NCEP40T17A N-Channel MOSFET
NCEP60T18 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NCEP01T30T-VB NCEP01T30T-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V ID (A) a Configuration 100 0.002 320 Single TO-247AC S D G Top View FEATURES • TrenchFET® Power MOSFET • Package with Low Thermal Resistance • 100 % Rg and UIS Tested D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °Ca TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.