VBsemi Electronics NDT014
The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing.| Part No. | NDT014 |
|---|---|
| Datasheet | NDT014 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free● TrenchFET® Power MOSFET
APPLICATIONS
● Load Switches for Portable Devices D RoHS COMPLIANT SOT-223-3 D S D G G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 TC = 25 °C 4.5 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 3.2 a 2.7 TA = 70 °C 2.3 A Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 3.2 2.1b, c TC = 25 °C 4.0 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 3.0 2.5b, c W TA = 70 °C 1.6b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)e, f TJ, Tstg - 55 to 150 260 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c, d t≤5s RthJA 40 Maximum Junction-to-Foot (Drain) Steady State RthJF 15 50 °C/W 20 Notes: a. Package limited, TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d.
