NTD5806NT4G Description
NTD5806NT4G NTD5806NT4G N-Channel 4 .VBsemi. 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.013 at VGS = 10 V 0.018 at VGS = 4.5 V ID (A)a, e 55 45 Qg (Typ) 42 nC TO-252.
NTD5806NT4G Key Features
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2011/65/EU