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NTD5806NT4G NTD5806NT4G N-Channel 4
www.VBsemi.com
0-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40
RDS(on) () 0.013 at VGS = 10 V 0.018 at VGS = 4.5 V
ID (A)a, e 55 45
Qg (Typ) 42 nC
TO-252
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
D
• OR-ing • Server • DC/DC
G
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current Pulse Single Pulse Avalanche Energy
IAS L = 0.
NTD5806NT4G Datasheet
