VBsemi Electronics NTMS4101PR2G
P-Channel 20V MOSFET
| Part No. | NTMS4101PR2G |
|---|---|
| Datasheet | NTMS4101PR2G Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 20V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Portable Devices - Load Switch - Battery Switch - Charger SwitchABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg Limit - 20 ± 12 - 13a - 10a - 8b, c - 7.1b, c - 50 - 6a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, e Maximum Junction-to-Case (Drain) Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 d.
