VBsemi Electronics P2003EV8
P-Channel 30V MOSFET
| Part No. | P2003EV8 |
|---|---|
| Datasheet | P2003EV8 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg Tested
APPLICATIONS
● Load Switch● Battery Switch S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 20 - 9.0 - 7.2 - 7.0a, b - 5.6a, b - 30 - 3.5 - 2.1a, b 4.2 2.7 2.5a, b 1.6a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 95 °C/W. d. Based on TC = 25 °C. t ≤ 10 s Steady State Symbol RthJA RthJF Typical 40 24 Maximum...
