VBsemi Electronics P2N04L03
N-Channel 40V MOSFET
| Part No. | P2N04L03 |
|---|---|
| Datasheet | P2N04L03 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 40V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench power MOSFET● Package with low thermal resistance
● 100 % Rg and UIS tested D Top View S D G G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation b TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT 40 ± 20 200 192 200 600 85 361 375 125 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (FR4 material). d. Parametric verification ongoing. SYMBOL RthJA RthJC LIMIT 40 0.4 UNIT V A mJ W °C UNIT °C/W 1 P2N04L03-VB SPECIFICATIONS (TC = 25 °C,...
