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P4015S-VB
P4015S-VB Datasheet P-Channel 40 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Configuration
- 40 0.0068 0.0130
- 90 Single
FEATURES • Trench Power MOSFET • Package with Low Thermal Resistance • 100%R g and UIS Tested
TO-252
S G
GDS Top View
Drain Connected to Tab
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Currenta
TC = 25 °C TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.