VBsemi Electronics P8006EDG
P-Channel MOSFET
| Part No. | P8006EDG |
|---|---|
| Datasheet | P8006EDG Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % UIS Tested
APPLICATIONS
● Load Switch S G GDS Top View D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Gate-Source Voltage VGS ± 20 V Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 100 °C ID - 30 - 25 Pulsed Drain Current IDM - 30 A Continuing Source Current (Diode Conduction) IS - 20 Avalanche Current IAS - 20 Single Pulse Avalanche Energy Maximum Power Dissipation L = 0.1 mH EAS 7.2 mJ TC = 25 °C TA = 25 °C PD 34a 4b W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambientb Junction-to-Case Notes: a. See SOA curve for voltage derating. b. Surface Mounted on 1" x 1" FR-4 boad. t ≤ 10 sec Steady State Symbol RthJA RthJC Typical 20 62 5 Maximum 25 75 6 Unit °C/W 1 P8006EDG-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate Thres...
