P8006EDG Description
P8006EDG-VB P8006EDG-VB Datasheet P-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID (A) - 30 - 25 Qg (Typ) 10.
P8006EDG Key Features
- TrenchFET® Power MOSFET
- 100 % UIS Tested