PHX6N60E
PHX6N60E is N-Channel 650V Power MOSFET manufactured by VBsemi.
FEATURES
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
APPLICATIONS
- Server and tele power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
TO-220 FULLPAK
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current a Linear Derating Factor
VGS at 10 V
TC = 25 °C TC = 100 °C
Single Pulse Avalanche Energy b Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode d V/dt d
TJ = 125 °C
EAS PD TJ, Tstg d V/dt
Soldering Remendations (Peak Temperature) c for 10 s
Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 28.2 m H, Rg = 25 Ω, IAS = 3.5 A. c. 1.6 mm from case. d. ISD ≤ ID, d I/dt = 100 A/μs, starting TJ = 25 °C.
LIMIT 650 ± 30 7.0 5.6 28
-55 to +150
300
UNIT...
