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QM06N65F - N-Channel 650V Power MOSFET

Key Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number QM06N65F
Manufacturer VBsemi
File Size 286.60 KB
Description N-Channel 650V Power MOSFET
Datasheet download datasheet QM06N65F Datasheet

Full PDF Text Transcription (Reference)

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QM06N65F-VB QM06N65F-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 1.