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RU3520H-VB
RU3520H-VB Datasheet N-Channel 40-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.0038 at VGS = 10 V 40
0.0057 at VGS = 4.5 V
ID (A)a 18 14.5
Qg (Typ.) 8 nC
FEATURES • Halogen-free According to IEC 61249-2-21 • Trench Power MOSFET • 100 % Rg and UIS Tested
APPLICATIONS • Notebook CPU Core
- High-Side Switch
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current Continuous Source-Drain Diode Current
IDM
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Avalanche Energy
L = 0.
RU3520H Datasheet
