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SCH2410-TL-E-VB
SCH2410-TL-E-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
1.200 at VGS = 10 V
1.300 at VGS = 8 V 60
1.500 at VGS = 4.5V 1.650 at VGS = 2.5V
ID (A) 0.3 0.28 0.25 0.15
Qg (Typ.) 0.75
S1 1
SC-89
6 D1
G1 2 D2 3
5 G2 4 S2
Top View
FEATURES • Trench Power MOSFET • 100 % Rg Tested
APPLICATIONS • Load/Power Switching for Portable Devices • Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories • Battery Operated Systems • Power Supply Converter Circuits
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current
TA = 25 °C TA = 70 °C
ID
IDM
0.30a, b 0.
SCH2410-TL-E Datasheet
