SDP10N06 Description
SDP10N06-VB SDP10N06-VB Datasheet N-Channel 650V (D-S) Super Junction Power MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max.
SDP10N06 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)