SDP10N06 - N-Channel 650V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS).

SDP10N06 n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	SDP10N06
Manufacturer	VBsemi
File Size	343.29 KB
Description	N-Channel 650V Power MOSFET
Datasheet	SDP10N06 Datasheet

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SDP10N06-VB SDP10N06-VB Datasheet N-Channel 650V (D-S) Super Junction Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 43 0.