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SFP640-VB
SFP640-VB Datasheet
N-Channel 200 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 0.110 at VGS = 10 V
TO-220AB
ID (A) 30
FEATURES • Trench Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
DRAIN connected to TAB
GD S Top View
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAS
Single Pulse Avalanche Energy
L = 0.
SFP640 Datasheet
