SI2302DS-T1-GE3 Overview
SI2302DS-T1-GE3 .VBsemi. SI2302DS-T1-GE3 N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.050 at VGS = 1.8 V ID (A)e 6a 6a 5.6 Qg (Typ.) 8.8 nC SOT-23 G1 S2 3D Top.
SI2302DS-T1-GE3 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC