Datasheet4U Logo Datasheet4U.com

SI2318CDS-T1-GE3 - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SI2318CDS-T1-GE3 www.VBsemi.com SI2318CDS-T1-GE3 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A)a 6.5 6.0 Qg (Typ.) 4.