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SI2318DS-T1-GE3 - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A)a 6.5 6.0 Qg (Typ.) 4.5 nC TO-236 (SOT-23) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter D G1 3D G S2 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.5a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 6.0 5.3 TA = 70 °C 5.