SI2318DS-T1-GE3 Overview
SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at VGS = 4.5 V ID (A)a 6.5 6.0 Qg (Typ.) 4.5 nC TO-236 (SOT-23).
SI2318DS-T1-GE3 Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC