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SI3437DV-T1-GE3 - 100V N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Trench Power MOSFET.
  • Low On-Resistance.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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SI3437DV-T1-GE3-VB www.VBsemi.com SI3437DV-T1-GE3-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.095 at VGS = 10 V 100 0.105 at VGS = 4.5 V ID (A)a, e 3.2 3.0 Qg (Typ.) 4.2 nC TSOP-6 D1 6D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converters, High Speed Switching D2 5D G3 4S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 µs) VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C ID TA = 70 °C IDM 100 ± 20 3.2e 2.8 e 3.0b, c 2.