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SIA433EDJ-T1-GE3 - P-Channel 20V MOSFET

Key Features

  • Trench Power MOSFET.
  • Thermally Enhanced DFN2X2 Package - Small Footprint Area - Low On-Resistance.

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SIA433EDJ-T1-GE3-VB SIA433EDJ-T1-GE3-VB Datasheet P-Channel 20 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = - 4.5 V - 20 0.040 at VGS = - 2.5 V ID (A) -10a -9a Qg (Typ.