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SM6A10NSU - N-Channel MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

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Datasheet Details

Part number SM6A10NSU
Manufacturer VBsemi
File Size 245.29 KB
Description N-Channel MOSFET
Datasheet download datasheet SM6A10NSU Datasheet
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    SM6A10NSU-VB www.VBsemi.com SM6A10NSU-VB Datasheet N-Channel 650V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 38 4 4.2 Single 0.
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