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SSD15N10 - N-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 150 °C Junction Temperature.
  • PWM Optimized.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SSD15N10
Manufacturer VBsemi
File Size 245.62 KB
Description N-Channel MOSFET
Datasheet download datasheet SSD15N10 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SSD15N10-VB SSD15N10-VB Datasheet N-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.114 at VGS = 10 V ID (A) 15 D TO-252 FEATURES • TrenchFET® Power MOSFET • 150 °C Junction Temperature • PWM Optimized • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch G GD S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Avalanche Current IAS Single Pulse Avalanche Energy L = 0.