SSM9975GM - Dual N-Channel 60V MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % UIS Tested.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2.

SSM9975GM dual n-channel 60v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	SSM9975GM
Manufacturer	VBsemi
File Size	270.31 KB
Description	Dual N-Channel 60V MOSFET
Datasheet	SSM9975GM Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
SSM9975GM	Dual N-channel Enhancement-mode Power MOSFET	Silicon Standard
SSM9975M	Dual N-channel Enhancement-mode Power MOSFET	Silicon Standard
SSM9971	N-Channel Enhancement Mode Power MosFET	SeCoS
SSM9971GD	Dual N-channel Enhancement-mode Power MOSFETs	Silicon Standard
SSM9971GH	N-CHANNEL ENHANCEMENT MODE POWER MOSFET	Silicon Standard

Other Datasheets by VBsemi

Part Number	Description
SSM9435GM	P-Channel 30V MOSFET
SSM3J36FS	P-Channel MOSFET
SSM3K318T	N-Channel 60V MOSFET
SSM4426GM	N-Channel 30V MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SSM9975GM-VB SSM9975GM-VB Datasheet Dual N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.012 at VGS = 10 V 60 0.015 at VGS = 4.5 V ID (A) 10 9.0 Qg (Typ.) 15 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Trench Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 APPLICATIONS • Set Top Box • Low Current DC/DC D1 G1 D2 G2 Top View S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 60 V VGS ± 20 TC = 25 °C 10a Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 8.2 7.