STB200NF03T4 Overview
STB200NF03T4-VB STB200NF03T4-VB Datasheet N-Channel 30-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0023 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A) 150 120 Qg (Typ) 82 nC D D2PAK (TO-263).
STB200NF03T4 Key Features
- Trench Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2011/65/EU