VBsemi Electronics STB200NF03T4
N-Channel 30V MOSFET
| Part No. | STB200NF03T4 |
|---|---|
| Datasheet | STB200NF03T4 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
● OR-ing● Server
● DC/DC G D S S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 150 Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID 120 35.8b, c A TA = 70 °C 27b, c Pulsed Drain Current IDM 500 Avalanche Current Pulse Single Pulse Avalanche Energy IAS 39 L = 0.1 mH EAS 94.8 mJ Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS 90a, e 3.13b, c A TC = 25 °C 250a Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 175 3.75b, c W TA = 70 °C 2.63b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Maximum Junction-to-Ambientb, d t 10 sec RthJA 32 Maximum Junction-to-Case Steady State RthJC 0.5 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d.
