STB20NM60 Description
STB20NM60-VB Datasheet N-Channel 650 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg Typ. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 24 6 11 Single 0.33 D2PAK (TO-263) G D S D G S N-Channel MOSFET.
STB20NM60 Key Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)