STB20NM60 - N-Channel 650V Power MOSFET

VBsemi

Key Features

Low figure-of-merit (FOM) Ron x Qg.
Low input capacitance (Ciss).
Reduced switching and conduction losses.
Ultra low gate charge (Qg).
Avalanche energy rated (UIS) Available Available Available.

STB20NM60 n-channel 650v power mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	STB20NM60
Manufacturer	VBsemi
File Size	291.11 KB
Description	N-Channel 650V Power MOSFET
Datasheet	STB20NM60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB20NM60-VB www.VBsemi.com STB20NM60-VB Datasheet N-Channel 650 V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg Typ. (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 24 6 11 Single 0.