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STB50NF25-VB
STB50NF25-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 250
RDS(on) () 0.040 at VGS = 10 V 0.045 at VGS = 6 V
ID (A) 60 55
Qg (Typ) 95
FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • New Low Thermal Resistance Package • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Industrial
RoHS
COMPLIANT
D D2PAK (TO-263)
GD S
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
STB50NF25 Datasheet
