STB50NF25 Description
STB50NF25-VB STB50NF25-VB Datasheet N-Channel 250 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) 250 RDS(on) () 0.040 at VGS = 10 V 0.045 at VGS = 6 V ID (A) 60 55 Qg (Typ).
STB50NF25 Key Features
- TrenchFET® Power MOSFETS
- 175 °C Junction Temperature
- New Low Thermal Resistance Package
- pliant to RoHS Directive 2002/95/EC